Plasma-enhanced low temperature growth of silicon nanowires and hierarchical structures by using tin and indium catalysts.
Identifieur interne : 001D15 ( Main/Exploration ); précédent : 001D14; suivant : 001D16Plasma-enhanced low temperature growth of silicon nanowires and hierarchical structures by using tin and indium catalysts.
Auteurs : RBID : pubmed:19436096Abstract
Plasma-enhanced low temperature growth (<300 degrees C) of silicon nanowires (SiNWs) and hierarchical structures via a vapor-liquid-solid (VLS) mechanism are investigated. The SiNWs were grown using tin and indium as catalysts prepared by in situ H(2) plasma reduction of SnO(2) and ITO substrates, respectively. Effective growth of SiNWs at temperatures as low as 240 degrees C have been achieved, while tin is found to be more ideal than indium in achieving a better size and density control of the SiNWs. Ultra-thin (4-8 nm) silica nanowires, sprouting from the dendritic nucleation patterns on the catalyst's surface, were also observed to form during the cooling process. A kinetic growth model has been proposed to account for their formation mechanism. This hierarchical structure combines the advantages of the size and position controllability from the catalyst-on-top VLS-SiNWs and the ultra-thin size from the catalyst-on-bottom VLS-ScNWs.
DOI: 10.1088/0957-4484/20/22/225604
PubMed: 19436096
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en">Plasma-enhanced low temperature growth of silicon nanowires and hierarchical structures by using tin and indium catalysts.</title><author><name sortKey="Yu, Linwei" uniqKey="Yu L">Linwei Yu</name><affiliation wicri:level="3"><nlm:affiliation>Laboratoire de Physique des Interfaces et des Couches Minces (LPICM), Ecole Polytechnique, CNRS, F-91128 Palaiseau, France. Linwei.Yu@polytechnique.edu</nlm:affiliation><country xml:lang="fr">France</country><wicri:regionArea>Laboratoire de Physique des Interfaces et des Couches Minces (LPICM), Ecole Polytechnique, CNRS, F-91128 Palaiseau</wicri:regionArea><placeName><region type="region" nuts="2">Île-de-France</region><settlement type="city">Palaiseau</settlement></placeName></affiliation></author><author><name sortKey="O Donnell, Benedict" uniqKey="O Donnell B">Benedict O'Donnell</name></author><author><name sortKey="Alet, Pierre Jean" uniqKey="Alet P">Pierre-Jean Alet</name></author><author><name sortKey="Conesa Boj, S" uniqKey="Conesa Boj S">S Conesa-Boj</name></author><author><name sortKey="Peir, F" uniqKey="Peir F">F Peiró</name></author><author><name sortKey="Arbiol, J" uniqKey="Arbiol J">J Arbiol</name></author><author><name sortKey="Cabarrocas, Pere Roca I" uniqKey="Cabarrocas P">Pere Roca I Cabarrocas</name></author></titleStmt><publicationStmt><date when="2009">2009</date><idno type="doi">10.1088/0957-4484/20/22/225604</idno><idno type="RBID">pubmed:19436096</idno><idno type="pmid">19436096</idno><idno type="wicri:Area/Main/Corpus">001E70</idno><idno type="wicri:Area/Main/Curation">001E70</idno><idno type="wicri:Area/Main/Exploration">001D15</idno></publicationStmt></fileDesc><profileDesc><textClass></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Plasma-enhanced low temperature growth (<300 degrees C) of silicon nanowires (SiNWs) and hierarchical structures via a vapor-liquid-solid (VLS) mechanism are investigated. The SiNWs were grown using tin and indium as catalysts prepared by in situ H(2) plasma reduction of SnO(2) and ITO substrates, respectively. Effective growth of SiNWs at temperatures as low as 240 degrees C have been achieved, while tin is found to be more ideal than indium in achieving a better size and density control of the SiNWs. Ultra-thin (4-8 nm) silica nanowires, sprouting from the dendritic nucleation patterns on the catalyst's surface, were also observed to form during the cooling process. A kinetic growth model has been proposed to account for their formation mechanism. This hierarchical structure combines the advantages of the size and position controllability from the catalyst-on-top VLS-SiNWs and the ultra-thin size from the catalyst-on-bottom VLS-ScNWs.</div></front></TEI><pubmed><MedlineCitation Owner="NLM" Status="PubMed-not-MEDLINE"><PMID Version="1">19436096</PMID><DateCreated><Year>2009</Year><Month>05</Month><Day>13</Day></DateCreated><DateCompleted><Year>2009</Year><Month>08</Month><Day>31</Day></DateCompleted><Article PubModel="Print-Electronic"><Journal><ISSN IssnType="Electronic">1361-6528</ISSN><JournalIssue CitedMedium="Internet"><Volume>20</Volume><Issue>22</Issue><PubDate><Year>2009</Year><Month>Jun</Month><Day>3</Day></PubDate></JournalIssue><Title>Nanotechnology</Title><ISOAbbreviation>Nanotechnology</ISOAbbreviation></Journal><ArticleTitle>Plasma-enhanced low temperature growth of silicon nanowires and hierarchical structures by using tin and indium catalysts.</ArticleTitle><Pagination><MedlinePgn>225604</MedlinePgn></Pagination><ELocationID EIdType="doi" ValidYN="Y">10.1088/0957-4484/20/22/225604</ELocationID><Abstract><AbstractText>Plasma-enhanced low temperature growth (<300 degrees C) of silicon nanowires (SiNWs) and hierarchical structures via a vapor-liquid-solid (VLS) mechanism are investigated. The SiNWs were grown using tin and indium as catalysts prepared by in situ H(2) plasma reduction of SnO(2) and ITO substrates, respectively. Effective growth of SiNWs at temperatures as low as 240 degrees C have been achieved, while tin is found to be more ideal than indium in achieving a better size and density control of the SiNWs. Ultra-thin (4-8 nm) silica nanowires, sprouting from the dendritic nucleation patterns on the catalyst's surface, were also observed to form during the cooling process. A kinetic growth model has been proposed to account for their formation mechanism. This hierarchical structure combines the advantages of the size and position controllability from the catalyst-on-top VLS-SiNWs and the ultra-thin size from the catalyst-on-bottom VLS-ScNWs.</AbstractText></Abstract><AuthorList CompleteYN="Y"><Author ValidYN="Y"><LastName>Yu</LastName><ForeName>Linwei</ForeName><Initials>L</Initials><Affiliation>Laboratoire de Physique des Interfaces et des Couches Minces (LPICM), Ecole Polytechnique, CNRS, F-91128 Palaiseau, France. Linwei.Yu@polytechnique.edu</Affiliation></Author><Author ValidYN="Y"><LastName>O'Donnell</LastName><ForeName>Benedict</ForeName><Initials>B</Initials></Author><Author ValidYN="Y"><LastName>Alet</LastName><ForeName>Pierre-Jean</ForeName><Initials>PJ</Initials></Author><Author ValidYN="Y"><LastName>Conesa-Boj</LastName><ForeName>S</ForeName><Initials>S</Initials></Author><Author ValidYN="Y"><LastName>Peiró</LastName><ForeName>F</ForeName><Initials>F</Initials></Author><Author ValidYN="Y"><LastName>Arbiol</LastName><ForeName>J</ForeName><Initials>J</Initials></Author><Author ValidYN="Y"><LastName>Cabarrocas</LastName><ForeName>Pere Roca I</ForeName><Initials>PR</Initials></Author></AuthorList><Language>eng</Language><PublicationTypeList><PublicationType>Journal Article</PublicationType></PublicationTypeList><ArticleDate DateType="Electronic"><Year>2009</Year><Month>05</Month><Day>13</Day></ArticleDate></Article><MedlineJournalInfo><Country>England</Country><MedlineTA>Nanotechnology</MedlineTA><NlmUniqueID>101241272</NlmUniqueID><ISSNLinking>0957-4484</ISSNLinking></MedlineJournalInfo></MedlineCitation><PubmedData><History><PubMedPubDate PubStatus="aheadofprint"><Year>2009</Year><Month>5</Month><Day>13</Day></PubMedPubDate><PubMedPubDate PubStatus="entrez"><Year>2009</Year><Month>5</Month><Day>14</Day><Hour>9</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="pubmed"><Year>2009</Year><Month>5</Month><Day>14</Day><Hour>9</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="medline"><Year>2009</Year><Month>5</Month><Day>14</Day><Hour>9</Hour><Minute>1</Minute></PubMedPubDate></History><PublicationStatus>ppublish</PublicationStatus><ArticleIdList><ArticleId IdType="pii">S0957-4484(09)08279-8</ArticleId><ArticleId IdType="doi">10.1088/0957-4484/20/22/225604</ArticleId><ArticleId IdType="pubmed">19436096</ArticleId></ArticleIdList></PubmedData></pubmed></record>Pour manipuler ce document sous Unix (Dilib)
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